Ti 완충층 두께에 따른 In2O3/Ti 적층박막의 전기적, 광학적 특성 변화
기관명 | NDSL |
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저널명 | 열처리공학회지 = Journal of the Korean society for heat treatment |
ISSN | 1225-1070, |
ISBN |
저자(한글) | 문현주,전재현,공태경,김대일 |
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저자(영문) | |
소속기관 | |
소속기관(영문) | |
출판인 | |
간행물 번호 | |
발행연도 | 2015-01-01 |
초록 | $In_2O_3/Ti$ bi-layered films were deposited on glass substrate at room temperature with radio frequency (RF) and direct current (DC) magnetron sputtering to consider the effect of Ti buffer layer on the electrical and optical properties. In a comparison of figure of merit, $In_2O_3$ 90 nm/Ti 10 nm thin films show the higher opto-electrical performance of $3.0{ times}10^{-4}{ Omega}^{-1}$ than that of the $In_2O_3$ single layer films ( $2.6{ times}10^{-4}{ Omega}^{-1}$ ). From the observed results, it is supposed that the $In_2O_3 ;90nm/TiO_2$ 10 nm bi-layered films may be an alternative candidate for transparent electrode in a transparent thin film transistor device. |
원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NART&cn=JAKO201506050646585 |
첨부파일 |
과학기술표준분류 | |
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ICT 기술분류 | |
DDC 분류 | |
주제어 (키워드) | lt,TEX gt,$In_2O_3$ lt,/TEX gt,. Ti,Magnetron sputtering,Surface roughness,Figure of merit |