| 초록 |
NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/ $SiO_2$ /p-NiO/ITO) provide ultimately fast photoresponses of rising time of $38.33{ mu}s$ and falling time of $39.25{ mu}s$ , respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells. |
