Influence of the Ag interlayer on the structural, optical, and electrical properties of ZTO/Ag/ ZTO films
기관명 | NDSL |
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저널명 | Transactions on electrical and electronic materials |
ISSN | 1229-7607, |
ISBN |
저자(한글) | Gong, Tae-Kyung,Moon, Hyun-Joo,Kim, Daeil |
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저자(영문) | |
소속기관 | |
소속기관(영문) | |
출판인 | |
간행물 번호 | |
발행연도 | 2016-01-01 |
초록 | ZnSnO 3 (ZTO)/Ag/ ZnSnO 3 (ZTO) trilayer films were prepared on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering. The electrical resistivity and optical transmittance of the films were investigated as a function of the Ag interlayer thickness. ZTO films with a 15 nm thick Ag interlayer show the highest average visible transmittance (83.2%) in the visible range. In this study, the highest figure of merit (2.1 #xD7;10 #x2212;2 #x2126; cm) is obtained with the ZTO 50 nm/Ag 15 nm/ZTO 50 nm films. The enhanced optical and electrical properties of ZTO films with a 15 nm thick Ag interlayer are attributed to the crystallization of the Ag interlayer, as supported by the distinct XRD pattern of the Ag (111) peaks. From the observed results, higher optical and electrical performance of the ZTO film with a 15 nm thick Ag interlayer seems to make a promising alternative to conventional transparent conductive ITO films. |
원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NART&cn=JAKO201614859331560 |
첨부파일 |
과학기술표준분류 | |
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ICT 기술분류 | |
DDC 분류 | |
주제어 (키워드) | ZTO,Ag,RF magnetron sputtering,Figure of merit |