MASK BLANK, METHOD OF MANUFACTURING IMPRINT MOLD, METHOD OF MANUFACTURING TRANSFER MASK, METHOD OF MANUFACTURING REFLECTIVE MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
기관명 | NDSL |
---|---|
출원인 | HOYA CORPORATION |
출원번호 | 18226165 |
출원일자 | 2023-07-25 |
공개번호 | 20231116 |
공개일자 | 0000-00-00 |
등록번호 | |
등록일자 | 0000-00-00 |
권리구분 | USAP |
초록 | A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom% or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less. |
원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=USAP&cn=USA2023110367196 |
첨부파일 |
과학기술표준분류 | |
---|---|
ICT 기술분류 | |
IPC분류체계CODE | G03F-001/24(2012.01),H01L-021/033(2006.01) |
주제어 (키워드) |