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특허/실용신안
METAL OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, DISPLAY APPARATUS, IMAGE SENSOR, AND X-RAY SENSOR
특허 실용신안 개요
| 기관명 | NDSL |
|---|---|
| 출원인 | TAKATA, Masahiro |
| 출원번호 | US-0095168 |
| 출원일자 | 2016-04-11 |
| 공개번호 | 20160805 |
| 공개일자 | 0000-00-00 |
| 등록번호 | |
| 등록일자 | 0000-00-00 |
| 권리구분 | USAP |
| 초록 | Provided are a metal oxide semiconductor film and a device including the same, the metal oxide semiconductor film including at least indium as a metal component, in which when an indium concentration in the metal oxide semiconductor film is represented by DI (atoms/cm3), and when a hydrogen concentration in the metal oxide semiconductor film is represented by DH (atoms/cm3), the following relational expression (1) is satisfied: 0.1≦DH/DI≦1.8 (1). |
| 원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=USAP&cn=USA2016080225859 |
| 첨부파일 |
추가정보
| 과학기술표준분류 | |
|---|---|
| ICT 기술분류 | |
| IPC분류체계CODE | H01L-029/24(2006.01),H01L-029/786(2006.01) |
| 주제어 (키워드) |